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Proceedings Paper

Simulation of bipolar/MOSFET hybrid mode transistor with Si/GeSi heterojunction base
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Paper Abstract

Bipolar/MOSFET hybrid mode lateral transistor is a transistor in which both bipolar and MOSFET currents flow simultaneously. Because of (1) Good compatibility with CMOS technology; (2) Larger current driving capability and transconductance than MOSFET. So, it is suitable to be taken as a bipolar device in BiCMOS element. In this paper, the Si/SiGe heterostructure, under the gate, is introduced into the conventional bipolar/MOSFET hybrid mode transistor. So a hybrid mode transistor with a lateral n+-Si/p-SiGe/n+-Si structure parallel in base is formed, in which the heterostructure of E-B junction n+-Si/p-SiGe has a high injection electron current from E to B region and a low injection hole current from B to E region (result in by higher barrier for hole), then the total injection efficiency will increase. When this effect becomes a main mechanism than that of the barrier lowering in the surface depletion layer, the characteristics of the device will be dependent on the parameters of SiGe alloy, such as the mole number of Germanium etc. The device simulation of Si/SiGe heterojunction base hybrid mode transistor has been carried out by MEDICI program. The simulation results show that IC and hFE increase with Mole number of Ge increasing and WB decreasing, then the current gain and current capability are improved than that of conventional bipolar/MOSFET hybrid Mode transistor.

Paper Details

Date Published: 28 February 2005
PDF: 7 pages
Proc. SPIE 5649, Smart Structures, Devices, and Systems II, (28 February 2005); doi: 10.1117/12.582331
Show Author Affiliations
Wei-Lian Guo, Tianjin Polytechnic Univ. (China)
Tianjin Univ. (China)
Ping-Juan Niu, Tianjin Polytechnic Univ. (China)
Xiao-Yun Li, Tianjin Polytechnic Univ. (China)
Lu-Hong Mao, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 5649:
Smart Structures, Devices, and Systems II
Said F. Al-Sarawi, Editor(s)

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