Share Email Print
cover

Proceedings Paper

The fabrication of devices in silicon using scanning probe microscopy
Author(s): Frank J. Ruess; Lars Oberbeck; Michelle Y. Simmons; Kuan Eng J. Goh; Alex R. Hamilton; Toby Hallam; Neil J. Curson; Robert G. Clark
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Over the last three years we have demonstrated key milestones in the fabrication of buried nano-scale devices in silicon using an ultra-high vacuum scanning tunnelling microscope (STM) and silicon molecular beam epitaxy (MBE). Recently we have achieved the final step of connecting the STM-patterned buried phosphorus devices to the outside world to perform electrical measurements. The results of our low temperature magnetotransport measurements highlight the potential of this approach for the creation of atomic-scale devices.

Paper Details

Date Published: 28 February 2005
PDF: 5 pages
Proc. SPIE 5649, Smart Structures, Devices, and Systems II, (28 February 2005); doi: 10.1117/12.582283
Show Author Affiliations
Frank J. Ruess, Univ. of New South Wales (Australia)
Lars Oberbeck, Univ. of New South Wales (Australia)
Michelle Y. Simmons, Univ. of New South Wales (Australia)
Kuan Eng J. Goh, Univ. of New South Wales (Australia)
Alex R. Hamilton, Univ. of New South Wales (Australia)
Toby Hallam, Univ. of New South Wales (Australia)
Neil J. Curson, Univ. of New South Wales (Australia)
Robert G. Clark, Univ. of New South Wales (Australia)


Published in SPIE Proceedings Vol. 5649:
Smart Structures, Devices, and Systems II
Said F. Al-Sarawi, Editor(s)

© SPIE. Terms of Use
Back to Top