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Proceedings Paper

Surface reconstructions induced by submonolayers of tin on Si(111)
Author(s): M. S. Worthington; J. L. Stevens; C. S. Chang; Ignatius S.T. Tsong
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Paper Abstract

We report the use of the techniques of scanning tunneling microscopy and impact-collision ion scattering spectrometry to study the in-plane geometry of both the (root)3X(root)3 and 2(root)3X2(root)3 reconstructions of Sn on Si(111). For the (root)3X(root)3 reconstruction, the Sn adatoms were found to prefer fourfold atop (T4) sites. For the 2(root)3X2(root)3 reconstruction, a two-layer epitaxial Sn model with a four-atom unit cell on the top layer is found to provide the best agreement with experimental data.

Paper Details

Date Published: 1 May 1992
PDF: 6 pages
Proc. SPIE 1639, Scanning Probe Microscopies, (1 May 1992); doi: 10.1117/12.58175
Show Author Affiliations
M. S. Worthington, Arizona State Univ. (United States)
J. L. Stevens, Arizona State Univ. (United States)
C. S. Chang, Arizona State Univ. (United States)
Ignatius S.T. Tsong, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 1639:
Scanning Probe Microscopies
Srinivas Manne, Editor(s)

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