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Proceedings Paper

Localization and shot noise in nanostructures
Author(s): A. F. Mehdi Anwar
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Paper Abstract

Nano-structures are increasingly finding more applications in modern electronic/photonic devices. However, an accurate prediction of the nano-device performance is complicated by carrier localization and, in certain applications, the presence of an applied magnetic field. Shot noise measurements are suggested as a means to quantify localization. An alternative technique using tunneling time to characterize localization in nano-structures in the presence of random elastic and inelastic scattering is presented. The treatment is extended to include the effect of magnetic fields. The calculations are carried out self-consistently by solving Schroedinger and Poisson's equations for the accurate determination of the developed space charge.

Paper Details

Date Published: 29 December 2004
PDF: 8 pages
Proc. SPIE 5593, Nanosensing: Materials and Devices, (29 December 2004); doi: 10.1117/12.581346
Show Author Affiliations
A. F. Mehdi Anwar, Univ. of Connecticut (United States)
Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 5593:
Nanosensing: Materials and Devices
M. Saif Islam; Achyut K. Dutta, Editor(s)

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