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Proceedings Paper

Long-wavelength VCSEL devices on GaAs substrates
Author(s): Jim-Young Chi; Hung-Pin D. Yang; Chen-Ming Lu; Ru-Shang Hsiao; Chih-Hung Chiou; Cheng-Hung Lee; Chun-Yuan Huang; Hsin-Chieh Yu; Chin-May Wang; Kuen-Fong Lin; Chih-Ming Lai; Li-Chung Wei; Nikolai A. Maleev; Alexey R. Kovsh; Chia-Pin Sung; Jyh-Shyang Wang; Jenn-Fang Chen; Tsin-Dong Lee
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Paper Abstract

Two approaches to realize the VCSEL devices based on GaAs substrates are investigated. The first approach utilizes InGaAs quantum wells with dilute nitride to extend the bandgap toward long wavelenegth. The second approach utilizes InAs/InGaAs quantum dots based on Stranski and Krastanov growth mode with confinement and strain combined to adjust the bandgap to 1.3 μm wavelength. High quality epitaxial layers with low threshold have been achieved with MBE and MOCVD. VCSEL performances that have been achieved are: Multimode operation at 1.303 μm with slope efficiency of 0.15 W/A (0.2 W/A), and maximum power of 1 mW (4 mW) for room temperature CW (pulse) operation have been achieved with MBE-grown In GaAaN active regions. Room temperature, CW single mode operation with SMSR > 40 dB at 1.303 μm has also been achieved with a slope efficiency of 0.17 W/A and maximum power of 0.75 mW also with MBE-grown InGaAaN active regions. In addition, MOCVD grown has also achieved a performance at 1.29 μm with slope efficiency, 0.066 W/A, and maximum power, 0.55 mW. VCSELs with 9 layers of quantum dots and all-semiconductor DBRs also achieved lasing at 1.3 μm.

Paper Details

Date Published: 31 January 2005
PDF: 11 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.581108
Show Author Affiliations
Jim-Young Chi, Industrial Technology Research Institute (Taiwan)
Hung-Pin D. Yang, Industrial Technology Research Institute (Taiwan)
Chen-Ming Lu, Industrial Technology Research Institute (Taiwan)
Ru-Shang Hsiao, Industrial Technology Research Institute (Taiwan)
National Chiao Tung Univ. (Taiwan)
Chih-Hung Chiou, Industrial Technology Research Institute (Taiwan)
Cheng-Hung Lee, Industrial Technology Research Institute (Taiwan)
Chun-Yuan Huang, Industrial Technology Research Institute (Taiwan)
Hsin-Chieh Yu, Industrial Technology Research Institute (Taiwan)
National Cheng Kung Univ. (Taiwan)
Chin-May Wang, Industrial Technology Research Institute (Taiwan)
Kuen-Fong Lin, Industrial Technology Research Institute (Taiwan)
Chih-Ming Lai, Industrial Technology Research Institute (Taiwan)
Li-Chung Wei, Industrial Technology Research Institute (Taiwan)
Nikolai A. Maleev, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey R. Kovsh, A.F. Ioffe Physico-Technical Institute (Russia)
Chia-Pin Sung, Industrial Technology Research Institute (Taiwan)
Jyh-Shyang Wang, Industrial Technology Research Institute (Taiwan)
Jenn-Fang Chen, National Chiao Tung Univ. (Taiwan)
Tsin-Dong Lee, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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