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Proceedings Paper

Dual-wavelength 650-780nm laser diodes
Author(s): WeiLing Guo; GuangDi Shen; JianJun Li; Ting Wang; Guo Gao; Deshu Zou
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Paper Abstract

A Novel structure of dual-wavelength semiconductor laser diode is proposed and fabricated. Two laser structures based on two kinds of materials AlGaAs and AlGaInP active layer, which are cascaded by a high doping tunnel junction during the epitaxial growth. The lasers can emit at wavelength of 699nm and 794nm at the same time. Without face coating, the output power of the dual-wavelength laser is high as 50mW at 220mA. And the slope efficiency of these devices is about 0.42A/W.

Paper Details

Date Published: 31 January 2005
PDF: 4 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.580367
Show Author Affiliations
WeiLing Guo, Beijing Univ. of Technology (China)
GuangDi Shen, Beijing Univ. of Technology (China)
JianJun Li, Beijing Univ. of Technology (China)
Ting Wang, Beijing Univ. of Technology (China)
Guo Gao, Beijing Univ. of Technology (China)
Deshu Zou, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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