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Proceedings Paper

High-performance InP-based resonant-cavity-enhanced photodetector based on InP/air-gap Bragg reflectors
Author(s): Yongqing Huang; Xiaomin Ren; Hui Huang; Qi Wang; Xingyan Wang
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Paper Abstract

In this paper, we demonstrate the design, fabrication and characterization of a long wavelength InP-based resonant cavity photodetector with InP/air-gap Bragg reflectors by using selective wet etching. The bottom mirror of the RCE photodetector is the InP/air-gap Bragg reflector; the top mirror is formed by the interface of semiconductor/air. The In0.53Ga0.47As absorption layer thickness is 300nm. A peak quantum efficiency of 60% at 1510nm and a 3-dB bandwidth of 16GHz are achieved with the active area of 50×50μm2. The dark current as low as 2nA was achieved at reverse bias of 3.0V.

Paper Details

Date Published: 31 January 2005
PDF: 8 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.580157
Show Author Affiliations
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Xingyan Wang, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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