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Proceedings Paper

Fabrication and characterization of carbon nanotube FETs
Author(s): Takashi Mizutani; Yutaka Ohno
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Paper Abstract

We have fabricated carbon nanotube (CNT) FETs using position-controlled growth technique. The CNT-FETs showed p-type conduction. The chirality of the CNT FET channel was determined by using microphotocurrent spectroscopy. Novel peapods FETs with fullerenes inserted in the CNTs were also fabricated. They showed ambipolar I-V characteristics with both n- and p-type conductions depending on the gate voltage. The ambipolar behavior was explained based on the Schottky-barrier-controlled transistor model, where the transistor action occurs primarily by changing the Schottky contact resistance by the gate voltage. It has been shown that the bandgap of the peapod FETs was dependent on what kind of fullerene was inserted in the CNT channel. We have also demonstrated that it was possible to control the conduction type of the FET channel by choosing contact metal with different work function without any doping in the CNT channel.

Paper Details

Date Published: 25 March 2005
PDF: 9 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.580040
Show Author Affiliations
Takashi Mizutani, Nagoya Univ. (Japan)
Yutaka Ohno, Nagoya Univ. (Japan)
Japan Science and Technology Agency (Japan)


Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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