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Proceedings Paper

Raman emission in porous silicon at 1.54 micron
Author(s): Luigi Sirleto; Varun Raghunathan; Andrea Mario Rossi; Bahram Jalali
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Paper Abstract

There have been many papers reporting visible luminescence and light emission at 1.54 micron, at room temperature, from porous silicon (Psi) and from Erbium doped Psi, respectively. These results have stimulated a great deal of excitement, because they suggest the possibility of a silicon based optoelectronics technology. In this paper, in order to generate radiation at 1.54 micron in Psi, a diffferent approach based on Raman scattering is presented. This approach has important advantages: no special impurities are required, so samples realisation is simple and chip; moreover enhancement of Raman scattering and nonlinear effects in nanostructured porous silicon could be experienced. Finally preliminary experimental results of Raman emission in porous silicon at 1.54 micron are reported.

Paper Details

Date Published: 18 August 2004
PDF: 8 pages
Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.579340
Show Author Affiliations
Luigi Sirleto, Istituto per la Microelettronica e Microsistemi/CNR (Italy)
Univ. of California/Los Angeles (United States)
Varun Raghunathan, Univ. of California/Los Angeles (United States)
Andrea Mario Rossi, Istituto Elettrotecnico Nazionale Galileo Ferraris (Italy)
Bahram Jalali, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 5451:
Integrated Optics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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