Share Email Print
cover

Proceedings Paper

Preparation and optical properties of ZnO films by cathodic electrodeposition
Author(s): Qingtao Wang; Guanzhong Wang; Bo Xu; Jiansheng Jie; Xinhai Han; Qingxuan Yu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

ZnO films on polycrystaline Zn substrates were synthesized by cathodic electrodeposition from an aqueous solution composed only of 0.05M zinc nitrate maintained at 65°C. Their microstructures were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Photoluminescence (PL) spectra of ZnO thin films prepared at more positive potential (-0.6~-0.8V) show a bond exciton photoluminescence band and intensive broad emission band around 2.17 eV, and three longitudinal optical (LO) phonon replica peaks of the bound exciton around 3.34. When more negative potential (-1.0~-1.4V) was applied in electrodeposition process, ultraviolet (UV) emission bands disappeared. A weak shoulder peak at about 1.87 eV was observed for all samples. The results indicate that more positive electrodeposition potential favors the high quality ZnO film growth. Annealed ZnO films prepared at more positive electrodeposition potentials (-0.6V~-1.0V) exhibit the strong ultraviolet emission at 3.35eV and a negligibly weak deep level emission. Thermal treatment results in the enhancement and sharpening of the excitonic photoluminescence bands and decrease of the deep level emission. Thermal treatment also decreases the Eg of ZnO film prepared at -1.0V from 3.56eV to 3.29eV.

Paper Details

Date Published: 12 January 2005
PDF: 8 pages
Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); doi: 10.1117/12.579123
Show Author Affiliations
Qingtao Wang, Univ. of Science and Technology of China (China)
Guanzhong Wang, Univ. of Science and Technology of China (China)
Bo Xu, Univ. of Science and Technology of China (China)
Jiansheng Jie, Univ. of Science and Technology of China (China)
Xinhai Han, Univ. of Science and Technology of China (China)
Qingxuan Yu, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 5632:
Light-Emitting Diode Materials and Devices
Gang Yu; Chuangtian Chen; Changhee Lee, Editor(s)

© SPIE. Terms of Use
Back to Top