Share Email Print
cover

Proceedings Paper

Advanced photomask repair technology for 65-nm lithography: II
Author(s): Yasutoshi Itou; Yoshiyuki Tanaka; Nobuyuki Yoshioka; Yasuhiko Sugiyama; Ryoji Hagiwara; Haruo Takahashi; Osamu Takaoka; Tomokazu Kozakai; Osamu Matsuda; Katsumi Suzuki; Mamoru Okabe; Syuichi Kikuchi; Atsushi Uemoto; Anto Yasaka; Tatsuya Adachi; Naoki Nishida; Toshiya Ozawa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The 65nm photomasks have to meet tight specifications and improve the production yield due to high production cost. The 65nm optical lithography has two candidates, 157nm and 193nm, and we are developing two types of experimental photomask repair systems, FIB and EB, for the 65nm generation. We designed and developed experimental EB and FIB system that are beta systems. The construction of these systems was the same design except the each column. The platforms of beta systems consist of anti-vibration design to reduce outer disturbance for repair accuracy. Furthermore, we developed a new CPU control system, especially the new beam-scanning control system that makes it possible to control the beam position below nanometer order. These developments will suppress transmission loss and improve repair accuracy of the systems. We also adopt the 6-inch mask SMIF pod system and the CAD data linkage system that matches the EB mask data image with the SED image to search defects in photomasks with sophisticated patterns such as OPC patterns. We evaluated the EB and FIB beta systems with AIMS, LWM and AFM. EB and FIB beta systems were able to deposit carbon film and etch chrome, quartz, and MoSi. Furthermore, We confirmed that repair accuracy is 3σ below 10nm and transmission is over 97%. We also confirmed that CAD linkage was able to repair sophisticated pattern completely. In this paper, we report the photomask defect repair experimental systems for the 65nm generation.

Paper Details

Date Published: 6 December 2004
PDF: 12 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.578615
Show Author Affiliations
Yasutoshi Itou, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yoshiyuki Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Nobuyuki Yoshioka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yasuhiko Sugiyama, SII NanoTechnology Inc. (Japan)
Ryoji Hagiwara, SII NanoTechnology Inc. (Japan)
Haruo Takahashi, SII NanoTechnology Inc. (Japan)
Osamu Takaoka, SII NanoTechnology Inc. (Japan)
Tomokazu Kozakai, SII NanoTechnology Inc. (Japan)
Osamu Matsuda, SII NanoTechnology Inc. (Japan)
Katsumi Suzuki, SII NanoTechnology Inc. (Japan)
Mamoru Okabe, SII NanoTechnology Inc. (Japan)
Syuichi Kikuchi, SII NanoTechnology Inc. (Japan)
Atsushi Uemoto, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)
Tatsuya Adachi, SII NanoTechnology Inc. (Japan)
Naoki Nishida, HOYA Corp. (Japan)
Toshiya Ozawa, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

© SPIE. Terms of Use
Back to Top