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Proceedings Paper

Optical parametric oscillator based on microstructured GaAs
Author(s): Konstantin L. Vodopyanov; Ofer Levi; Paulina S. Kuo; Thierry J. Pinguet; James S. Harris; Martin M. Fejer; B. Gerard; L. Becouarn; Eric Lallier
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Paper Abstract

We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal, 0.5-mm-thick, 5-mm-wide, and 11-mm-long, with a domain reversal period of 61.2 μm. By tuning either the near-IR pump wavelength between 1.75 and 2 μm, or the temperature of the GaAs crystal, the mid-IR output tuned between 2 and 11 μm, limited only by the spectral range of the OPO mirrors. The pump threshold of the singly-resonant OPO was 16 μJ for the 6-ns pump pulses, and the photon conversion slope efficiency reached 54%. Also, we show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.

Paper Details

Date Published: 23 December 2004
PDF: 7 pages
Proc. SPIE 5620, Solid State Laser Technologies and Femtosecond Phenomena, (23 December 2004); doi: 10.1117/12.578449
Show Author Affiliations
Konstantin L. Vodopyanov, Stanford Univ. (United States)
Ofer Levi, Stanford Univ. (United States)
Paulina S. Kuo, Stanford Univ. (United States)
Thierry J. Pinguet, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)
Martin M. Fejer, Stanford Univ. (United States)
B. Gerard, Thales Research and Technology (France)
L. Becouarn, Thales Research and Technology (France)
Eric Lallier, Thales Research and Technology (France)

Published in SPIE Proceedings Vol. 5620:
Solid State Laser Technologies and Femtosecond Phenomena
Jonathan A. C. Terry; W. Andrew Clarkson, Editor(s)

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