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Proceedings Paper

Float zone silicon for infrared and microwave applications
Author(s): Thomas Clausen
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Paper Abstract

High Resistivity (HiRes(TM)) silicon (Resistivity ≥ 8000 Ohm-cm) is demonstrated as the best choice of microwave substrate for emerging radio frequency (RF) MEMS devices operating at GHz/THz frequencies. The potential combination of active devices with passive MEMS structures allows single-chip realization of complete and cost effective microwave and millimeter wave systems. High Transparency (HiTran) silicon is demonstrated as the best choice of infrared material for systems working in the 3-5 micron region and for some type of systems working in the 8-12 micron region provided than thickness of the HiTran material does not exceed 2 mm.

Paper Details

Date Published: 16 December 2004
PDF: 11 pages
Proc. SPIE 5621, Optical Materials in Defence Systems Technology, (16 December 2004); doi: 10.1117/12.578238
Show Author Affiliations
Thomas Clausen, Topsil Semiconductor Materials A/S (Denmark)


Published in SPIE Proceedings Vol. 5621:
Optical Materials in Defence Systems Technology
Anthony W. Vere; James G. Grote; Francois Kajzar, Editor(s)

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