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Proceedings Paper

Performance of small-pitched Hg1-xCdxTe photoconductors based on MBE-grown multilayer structures
Author(s): Galina V. Chekanova; Albina A. Drugova; Sergey A. Dvoretski; Viacheslav A. Kholodnov; Alexey A. Komov; Alexander V. Kurbatov; Ivan Yu. Lartsev; Mikhail S. Nikitin; Yuri G. Sidorov
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Paper Abstract

Compact small-pitched infrared focal plane arrays (FPA) having ultimate performance are of the great interest for development and production of state-of-the-art special and common use thermal imaging systems lighter in weight and with lower energy consumption. Novel MBE-grown Hg1-xCdxTe epitaxial multi-layer structures are considered perspective for manufacturing of such FPA. Objective of the present work was to examine the impact of small-pitched Long-Wave Infrared (LWIR) Hg1-xCdxTe photoconductor device performance on variation of background flux density. Peak wavelength λp was ranged from 10.5 to 11.5 μm at 78-100 K. High performance small active area photoconductors based on MBE-grown multi-layer structures consisting of homogeneous narrow-gap n-Hg1-xCdxTe absorbing layer (n-absorber) both side blocked by thin graded-gap Hg1-xCdxTe layers have been fabricated and examined. Availability of innovative Hg1-xCdxTe epitaxial material (half-finished products of photoconductors - three-layer sensitive structures grown by MBE in single run) gives opportunity to manufacture and offer versatile detectors with flexible tuning of electro-optical parameters. Multi-element (2 x 32=64 elements) Hg1-xCdxTe photoconductors with pixel's active area size 30 μm x 30 μm and pitch 45 µm were tested. Electro-optical measurements have shown improved value of peak responsivity and detectivity close to theoretically predicted for model photoconductor.

Paper Details

Date Published: 6 December 2004
PDF: 12 pages
Proc. SPIE 5612, Electro-Optical and Infrared Systems: Technology and Applications, (6 December 2004); doi: 10.1117/12.578065
Show Author Affiliations
Galina V. Chekanova, Federal State Unitary Enterprise ALPHA (Russia)
Albina A. Drugova, Institute of Radio Engineering and Electronics (Russia)
Sergey A. Dvoretski, Institute of Semiconductor Physics (Russia)
Viacheslav A. Kholodnov, Institute of Radio Engineering and Electronics (Russia)
Alexey A. Komov, Federal State Unitary Enterprise ALPHA (Russia)
Alexander V. Kurbatov, Federal State Unitary Enterprise ALPHA (Russia)
Ivan Yu. Lartsev, Federal State Unitary Enterprise ALPHA (Russia)
Mikhail S. Nikitin, Federal State Unitary Enterprise ALPHA (Russia)
Yuri G. Sidorov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5612:
Electro-Optical and Infrared Systems: Technology and Applications
Ronald G. Driggers; David A. Huckridge, Editor(s)

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