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Proceedings Paper

High-brightness tapered laser diode bars and optical modules with Al-free active region (lambda = 980 nm)
Author(s): Michel Krakowski; Michel Calligaro; Christian Larat; Michel Lecomte; Nicolas Michel; Olivier Parillaud; Benoit Boulant; Thierry Fillardet
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Paper Abstract

We have developed Al-free tapered laser structures for both high brightness and reliability. The Al-free active region consists of a separate confinement heterostructure (SCH) with a GaInAsP large optical cavity (LOC) to provide low optical losses and a strained GaInAs quantum well for high gain. Broad-area lasers diodes (100 μm width) were fabricated with low internal losses (< 2.3 cm-1), high internal efficiency (98%) and a low transparency current density (100 A/cm2). In order to control the spatial beam quality along the slow axis, we fabricated low aperture tapered laser structures. On a single tapered laser, we have obtained an output power of 1 W at 1.5 A together with a wall-plug efficiency of 44%. Furthermore, we have fabricated high brightness mini-bars of index guided tapered lasers at 980 nm (emissive area 2.7 mm) emitting a power of 25 W CW at 15°C and 50 W QCW at 25°C with low slow axis angles. Thanks to high power and low far-field width (FWHM=3.5° at 20 W), we demonstrate 11 W of output power coupled into a 100 μm diameter optical fiber from a single mini-bar, by means of a collective beam shaping technique.

Paper Details

Date Published: 23 December 2004
PDF: 9 pages
Proc. SPIE 5620, Solid State Laser Technologies and Femtosecond Phenomena, (23 December 2004); doi: 10.1117/12.577514
Show Author Affiliations
Michel Krakowski, Thales Research and Technology (France)
Alcatel-Thales III-V Lab. (France)
Michel Calligaro, Thales Research and Technology (France)
Alcatel-Thales III-V Lab. (France)
Christian Larat, Thales Research and Technology (France)
Michel Lecomte, Thales Research and Technology (France)
Alcatel-Thales III-V Lab. (France)
Nicolas Michel, Thales Research and Technology (France)
Alcatel-Thales III-V Lab. (France)
Olivier Parillaud, Thales Research and Technology (France)
Alcatel-Thales III-V Lab. (France)
Benoit Boulant, Thales Laser Diodes (France)
Thierry Fillardet, Thales Laser Diodes (France)


Published in SPIE Proceedings Vol. 5620:
Solid State Laser Technologies and Femtosecond Phenomena
Jonathan A. C. Terry; W. Andrew Clarkson, Editor(s)

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