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Proceedings Paper

SCH-SQW semiconductor lasers
Author(s): Yuxia Wang; Xiaohua Wang; Gang Zhong; Chunling Liu
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Paper Abstract

In this paper, we have designed a laser structure with separate confinement single quantum well (SCH-SQW )and have grown the laser structure by MOCVD .Moreover we have also fabricated broad area structure .The lasers are cleaved into bars and coated with high and low reflectivity films (approximate 95% and 5%).The measured results of the device show that its threshold current is 1.95A ,The CW output power is 2W ,and the peak wavelength of the device is 910nm±2nm .

Paper Details

Date Published: 20 January 2005
PDF: 6 pages
Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); doi: 10.1117/12.577407
Show Author Affiliations
Yuxia Wang, Changchun Univ. of Science and Technology (China)
Xiaohua Wang, Changchun Univ. of Science and Technology (China)
Gang Zhong, Changchun Univ. of Science and Technology (China)
Chunling Liu, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 5628:
Semiconductor Lasers and Applications II
Jian-quan Yao; Yung Jui Chen; Seok Lee, Editor(s)

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