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Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers
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Paper Abstract

In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum well lasers with various GaAs1-xNx strain compensated barriers (x=0%, 0.5%, 1%, and 2%) have been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x=0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient T0 values of 110 K and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1-xNx barrier increases more than 1% the laser performance degrades rapidly and the T0 value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1-xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1-xNx quantum-well lasers are also investigated.

Paper Details

Date Published: 20 January 2005
PDF: 9 pages
Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); doi: 10.1117/12.577321
Show Author Affiliations
Yi-An Chang, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Ya-Hsien Chang, National Chiao Tung Univ. (Taiwan)
Shing Chung Wang, National Chiao Tung Univ. (Taiwan)
Li-Hong Laih, Millennium Communication Corp. (Taiwan)

Published in SPIE Proceedings Vol. 5628:
Semiconductor Lasers and Applications II
Jian-quan Yao; Yung Jui Chen; Seok Lee, Editor(s)

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