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Proceedings Paper

Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer
Author(s): Chi-Kuan Lin; Hao-Chung Kuo; Yu-Sheng Liao; Gong-Ru Lin
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Paper Abstract

A novel top-illuminated metamorphic In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded InxGa1-xP (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9x10-11 W/Hz1/2, and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.

Paper Details

Date Published: 31 January 2005
PDF: 8 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.577048
Show Author Affiliations
Chi-Kuan Lin, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Yu-Sheng Liao, National Chiao Tung Univ. (Taiwan)
Gong-Ru Lin, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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