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Proceedings Paper

Vertical-injection depleted optical thyristor laser diode with InGaAs/InGaAsP MQW structure
Author(s): Woon-Kyung Choi; Doo-Gun Kim; Young-Wan Choi; Seok Lee; Deok Ha Woo; Young Tae Byun; Sun Ho Kim
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Paper Abstract

We present the first demonstration of the vertical-injection depleted optical thyristor-laser diode (VIDOT-LD) with InGaAs/InGaAsP multiple quantum well structure. The VIDOT-LD using the vertical-injection structure shows very good isolation between input and output signal. For the faster switching speed and the lower power consumption, we optimized the structure of a fully depleted optical thyristor (DOT) by the depletion of charge at the lower negative voltage. The measured switching voltage and current are 3.36 V and 10 μA respectively. The holding voltage and current are respectively 1.37 V and 100 μA. The lasing threshold current is 131 mA at 25°C. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is no input signal.

Paper Details

Date Published: 20 January 2005
PDF: 8 pages
Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); doi: 10.1117/12.576767
Show Author Affiliations
Woon-Kyung Choi, Chung-Ang Univ. (South Korea)
Doo-Gun Kim, Chung-Ang Univ. (South Korea)
Young-Wan Choi, Chung-Ang Univ. (South Korea)
Seok Lee, Korea Institute of Science and Technology (South Korea)
Deok Ha Woo, Korea Institute of Science and Technology (South Korea)
Young Tae Byun, Korea Institute of Science and Technology (South Korea)
Sun Ho Kim, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 5628:
Semiconductor Lasers and Applications II
Jian-quan Yao; Yung Jui Chen; Seok Lee, Editor(s)

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