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Proceedings Paper

The effects of oxygen partial pressure and substrate temperature on the structural and optical properties of ZnO films
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Paper Abstract

ZnO were deposited on sapphire and silicon substrates by RF magnetron sputtering from a metallic zinc target. The structural and optical propertied of ZnO films were studied by X-ray diffraction, and UV-VIS-NIR scanning spectrophotometer. XRD measurements show ZnO films had a preferential orientation along the c-axis. Only one peak, (002) phase, appears on the diffraction spectra. The transmittance spectra indicate that ZnO films possessed a transmittance of about 80% in the visible region and a sharp absorption edge at wavelength of about 390nm. The refractive index n and the extinction coefficient k are all sensitive to the oxygen partial pressure and the substrate temperature. Furthermore, based on the ideal five layers symmetrical waveguide films, the relationships of the loss and the thickness of the waveguide layer and the buffer layer were analyzed using ZnO as waveguide layer and SiO2 as buffer layer.

Paper Details

Date Published: 17 January 2005
PDF: 9 pages
Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); doi: 10.1117/12.576370
Show Author Affiliations
Tong Zou, Zhejiang Univ. (China)
Hui Ye, Zhejiang Univ. (China)
Weidong Shen, Zhejiang Univ. (China)
Zhiru Shen, Zhejiang Univ. (China)
Yong Zhu, Zhejiang Univ. (China)


Published in SPIE Proceedings Vol. 5644:
Optoelectronic Devices and Integration
Hai Ming; Xuping Zhang; Maggie Yihong Chen, Editor(s)

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