Share Email Print

Proceedings Paper

Growth of highly c-axis-oriented SBN thin films on Si(100) with an MgO buffer layer by the sol-gel method
Author(s): Hui Ye; Xiaoyan Cao; Zhiru Shen; Bing Guo; Peifu Gu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Dense and crack-free SBN thin films with the preferred c-axis orientation were successfully fabricated by the sol-gel method on Si(100) substrates with a MgO buffer layer. It was found that introducing the MgO buffer layer could effectively promote the formation of TTB SBN phase from SN and BN phases at lower temperature. Effects of annealing temperature and thickness of MgO buffer layer on the structural and morphological properties of SBN thin films were investigated. The SBN film with MgO buffer layer showed excellent epitaxy and densely packed grain morphology. The capacitance-voltage (C-V) properties of SBN films deposited on silicon substrates were found completely different from those of the films deposited on MgO-buffered silicon substrates, the C-V curves of SBN/Si films and SBN/MgO/Si films represent typical shapes of asymmetric and butterfly, respectively, indicating the improvement of the electrical properties and ferroelectric properties of the SBN films by introducing the MgO buffer layer.

Paper Details

Date Published: 17 January 2005
PDF: 6 pages
Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); doi: 10.1117/12.576365
Show Author Affiliations
Hui Ye, Zhejiang Univ. (China)
Xiaoyan Cao, Zhejiang Univ. (China)
Zhiru Shen, Zhejiang Univ. (China)
Bing Guo, Zhejiang Univ. (China)
Peifu Gu, Zhejiang Univ. (China)

Published in SPIE Proceedings Vol. 5644:
Optoelectronic Devices and Integration
Hai Ming; Xuping Zhang; Maggie Yihong Chen, Editor(s)

© SPIE. Terms of Use
Back to Top