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Proceedings Paper

Resolution enhancement in optical lithography with chromium wire-grid polarization mask
Author(s): Guobin Yu; Wumei Lin; Tingwen Xing; Hanmin Yao
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Paper Abstract

Polarization effects have only recently been considered an issue that is growing more for optical lithography. It has been demonstrated that wire-grid structures placed within features have the ability to polarize incident light on a mask. This paper also recognizes the advantages that can be gleamed from the polarization properties, but differs in that it attempts to use a chromium wire-grid polarization mask itself to polarize the incident light. In this paper, we explore a vector model of microlithography imaging with polarization distribution function. Polarization from chromium wire-grid polarization mask can be used as a new lever to improve lithographic performance. This paper also addresses the fundamental issues underlying the design of such a chromium wire-grid polarization mask. The influence of a chromium wire-grid polarization mask on microlithography system has been systematically investigated by comparison on the imaging contrast and the process window. We compare the effects of polarization light imaging with a conventional mask and a chromium wire-grid polarization mask at wavelength of 0.248 μm, a numerical aperture of 0.65 and a partial-coherence of 0.2. It can be concluded that a high-resolution imaging performance can be obtained by using chromium wire-grid polarization mask.

Paper Details

Date Published: 27 January 2005
PDF: 8 pages
Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); doi: 10.1117/12.576127
Show Author Affiliations
Guobin Yu, Institute of Optics and Electronics, CAS (China)
Wumei Lin, Institute of Optics and Electronics, CAS (China)
Tingwen Xing, Institute of Optics and Electronics, CAS (China)
Hanmin Yao, Institute of Optics and Electronics, CAS (China)

Published in SPIE Proceedings Vol. 5645:
Advanced Microlithography Technologies
Yangyuan Wang; Jun-en Yao; Christopher J. Progler, Editor(s)

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