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Proceedings Paper

Optical absorption spectra analysis of silicon-rich hydrogenated amorphous silicon nitride thin films
Author(s): Wei Yu; Yanbin Yang; Huijing Du; Wenge Ding; Li Han; Guangsheng Fu
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Paper Abstract

Silicon-rich hydrogenated silicon nitride thin films (a-SiNx:H) characterized with amorphous silicon cluster separations are deposited by helicon wave plasma-enhanced chemical vapor deposition technique. The optical absorption properties of the deposited films are obtained and analyzed from both light transmittance and reflectance measurements. A trend of blue shift of the exponential tail absorption region is observed with increasing nitrogen content x and the optical gap Eg, the Tauc coefficient B and the Urbach parameter EU have been discussed in terms of the compositional and structural characteristics of the deposited films. It is concluded that the separation of amorphous silicon particles from the a-SiNx:H matrices leads an increasing trend of more disorder microstructure presenting as the features of large EU and small B compared with normal films, especially, the blue shift of the optical absorption edge and the widening of the optical band gap correlated with a three-dimensional quantum confinement effect of amorphous silicon nano-particles is suggested for the films with higher x.

Paper Details

Date Published: 9 February 2005
PDF: 4 pages
Proc. SPIE 5635, Nanophotonics, Nanostructure, and Nanometrology, (9 February 2005); doi: 10.1117/12.575996
Show Author Affiliations
Wei Yu, Hebei Univ. (China)
Yanbin Yang, Hebei Univ. (China)
Huijing Du, Yanshan Univ. (China)
Wenge Ding, Hebei Univ. (China)
Li Han, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)


Published in SPIE Proceedings Vol. 5635:
Nanophotonics, Nanostructure, and Nanometrology
Xing Zhu; Stephen Y. Chou; Yasuhiko Arakawa, Editor(s)

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