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Proceedings Paper

Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging
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Paper Abstract

To extend the application of current optical lithographic tools to next generation production technology, it is necessary to reduce the k1 factor in Rayleigh's resolution equation. Double dipole lithography (DDL) is one of the candidates for a low-k1 imaging technique and it is a viable solution for 65- and 45-nm technology nodes. Because DDL takes has the advantage of extreme off-axis illumination of the dipole, the printing capability of small features as well as their through-pitch common process window can be enhanced. However, as a dipole illuminator gains the benefits of high contrast only for structures perpendicular to the dipole orientation, the original mask layout must be converted into horizontal and vertical components and printed in a double exposure. Throughput will be sacrificed due to the multiple exposures. Nevertheless, DDL mask manufacture is relatively simple compared to the production of the more complicated phase shift mask (PSM) and chromeless phase lithography (CPL). As regards an overlay issued from the separate image composition, several papers have shown the minor effect on pattern fidelity using the current ArF scanner. To split the design layout according to the pattern orientation, the double exposure scheme needs an automatic layout conversion algorithm. To integrate the H V conversion with model- and/or rule-based optical proximity corrections (OPCs), several approaches for pattern decomposition associated with OPC treatment have been suggested. In this paper we will go over the development of model- and rule-based OPC treatment and will focus on current technology for accurate model-based OPC development with empirical model calibration. Using the technique the lithographic performances such as pattern fidelity, process window as well as overlay error sensitivity will be demonstrated. We focus on a 65-nm technology node with k1 near 0.31. Based on the success of tool development and verification, the DDL with full-chip OPC-treated decomposition will become a mature low-k1 imaging solution.

Paper Details

Date Published: 27 January 2005
PDF: 11 pages
Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); doi: 10.1117/12.575989
Show Author Affiliations
Tsann-Bim Chiou, ASML Taiwan Ltd. (Taiwan)
Alek C. Chen, ASML Taiwan Ltd. (Taiwan)
Stephen D. Hsu, ASML MaskTools, Inc. (United States)
Mark Eurlings, ASML Netherlands B.V. (Netherlands)
Eric Hendrickx, IMEC (Belgium)


Published in SPIE Proceedings Vol. 5645:
Advanced Microlithography Technologies
Yangyuan Wang; Jun-en Yao; Christopher J. Progler, Editor(s)

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