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Proceedings Paper

Optically pumped vertical external-cavity surface-emitting lasers
Author(s): Yanrong Song; Weiming Yu; Jianghai Hu; Zhigang Zhang; Yonggang Wang; Xiaoping Guo; Meng Chen; Gang Li
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Paper Abstract

We present an optically pumped vertical external cavity surface emitting lasers using the semiconductor gain chip composed of quantum wells. The dependence of the spectrum of the output on the temperature of the gain chip was measured. The maximum output power reached 40mW at the wavelength of 1015.5nm with the pump power of 1.5W. The optical conversion efficiency reached 2.7%.

Paper Details

Date Published: 20 January 2005
PDF: 4 pages
Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); doi: 10.1117/12.575834
Show Author Affiliations
Yanrong Song, Beijing Univ. of Technology (China)
Weiming Yu, Beijing Univ. of Technology (China)
Jianghai Hu, Beijing Univ. of Technology (China)
Zhigang Zhang, Beijing Univ. of Technology (China)
Tianjin Univ. (China)
Yonggang Wang, Tianjin Univ. (China)
Xiaoping Guo, Beijing Univ. of Technology (China)
Meng Chen, Beijing Univ. of Technology (China)
Gang Li, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 5628:
Semiconductor Lasers and Applications II
Jian-quan Yao; Yung Jui Chen; Seok Lee, Editor(s)

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