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Proceedings Paper

Applications of ICP in optoelectronic device fabrication
Author(s): Yi Gan; Jun Zhang; Shan Jiang; Xiaodong Huang; Ning Zhou; Ligang Deng
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Paper Abstract

Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl2/CH4/N2 have been demonstrated first time in fabrications of semiconductor laser. Low damage CH4/H2 ICP InP sub-micron grating etching using SiNx mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl2/CH4/Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).

Paper Details

Date Published: 31 January 2005
PDF: 9 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.575729
Show Author Affiliations
Yi Gan, Accelink Technologies Co., Ltd (China)
Jun Zhang, Accelink Technologies Co., Ltd (China)
Shan Jiang, Accelink Technologies Co., Ltd (China)
Xiaodong Huang, Accelink Technologies Co., Ltd (China)
Ning Zhou, Accelink Technologies Co., Ltd (China)
Ligang Deng, Oxford Instruments Plasma Technology (United Kingdom)

Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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