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Proceedings Paper

Study on ion etching technology of infrared antireflection subwavelength relief structure
Author(s): Lianhe Dong; Yu Dong; Yanjun Sun
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Paper Abstract

Based on reactive ion etching (RIE) technology, a 2-D symmetric tetragonal and columnar subwavelength surface relief structure for infrared antireflection can be made on silicon wafer. By analyzing the impact on etch rate, anisotropy and uniformity caused by some technological parameters in reactive ion etching (RIE), parameters such as etchant gas, concentration and flow rate of the gas, pressure of reaction room and radio-frequency power density can be selected. Meanwhile, surface structure appearance, parameters and infrared transmission performance of etching sample have been measured, and the measure results have been analyzed according to technological demands.

Paper Details

Date Published: 27 January 2005
PDF: 5 pages
Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); doi: 10.1117/12.575647
Show Author Affiliations
Lianhe Dong, Changchun Univ. of Science and Technology (China)
Yu Dong, Changchun Univ. of Science and Technology (China)
Yanjun Sun, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 5645:
Advanced Microlithography Technologies
Yangyuan Wang; Jun-en Yao; Christopher J. Progler, Editor(s)

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