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Proceedings Paper

Raman spectroscopy of annealed InAlAs quantum dots
Author(s): Bin Wang; Xiaoxuan Xu; Yongchun Shu; Jianghong Yao; Zhangcheng Xu
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Paper Abstract

Raman spectra of In0.65Al0.35As quantum dots (QDs) embedded between GaAlAs and GaP have been measured at room temperature. For the as-grown sample, in addition to the TO/LO modes from GaAs substrate, a weak broad peak appears from 165 cm-1 to 203 cm-1, corresponding to the interface mode of InAlAs QDs. The AlAs-like and GaP-like modes can be clearly seen at 382 cm-1. For the annealed samples, the AlAs and GaP-like modes disappeared, while the InAs-like modes become stronger, indicating strong intermixing between QDs and the matrix and the formation of uniform InGaAlAsP alloy.

Paper Details

Date Published: 9 February 2005
PDF: 3 pages
Proc. SPIE 5635, Nanophotonics, Nanostructure, and Nanometrology, (9 February 2005); doi: 10.1117/12.575539
Show Author Affiliations
Bin Wang, Nankai Univ. (United States)
Xiaoxuan Xu, Nankai Univ. (United States)
Yongchun Shu, Nankai Univ. (United States)
Jianghong Yao, Nankai Univ. (United States)
Zhangcheng Xu, Nankai Univ. (United States)

Published in SPIE Proceedings Vol. 5635:
Nanophotonics, Nanostructure, and Nanometrology
Xing Zhu; Stephen Y. Chou; Yasuhiko Arakawa, Editor(s)

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