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Proceedings Paper

Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver
Author(s): Sheng Xie; Chao Chen; Jian-Tao Bian
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Paper Abstract

Model is developed for the dc I-V characteristics and microwave small-signal parameters of the InP-based In0.52Al0.28As/In0.65Ga0.35As HEMT’s based on physical principles, and the effect of the extrinsic source and drain resistances has also been included. Using the parameters obtained by this model and the small-signal model of PIN detector, we simulated the transimpedance configurations with an inverter and a cascode input circuit of monolithically integrated PIN-HEMT front-end optical receiver. The results indicate that the cascode input stage can realize a smaller input capacitance than the inverter-type, so it has a wider bandwidth. In order to operate in 2.5Gb/s transmission system, the cascode input stage is applied and the parameters are optimized. The simulations reveal that the transimpedance gain is larger than 63.2dBΩ and the sensitivity is 30dBm when the bit rate is 2.5Gb/s. The results obtained in this paper provide a guideline for the fabrication of PIN-HEMT optical receiver.

Paper Details

Date Published: 31 January 2005
PDF: 11 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.575448
Show Author Affiliations
Sheng Xie, Xiamen Univ. (China)
Chao Chen, Xiamen Univ. (China)
Jian-Tao Bian, Xiamen Univ. (China)

Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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