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Proceedings Paper

Simulation of 1.3-µm AlGaInAs/InP strained MQW lasers
Author(s): Shang-Wei Hsieh; Hsiu-Fen Chen; Ming-Wei Yao; Yen-Kuang Kuo
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Paper Abstract

Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al0.5In0.5As electron stop layer and an active region consisting of Al0.175Ga0.095In0.73As(6 nm)/Al0.27Ga0.21In0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-µm-long AlGaInAs/InP strained quantum-well laser under study.

Paper Details

Date Published: 20 January 2005
PDF: 9 pages
Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); doi: 10.1117/12.575434
Show Author Affiliations
Shang-Wei Hsieh, National Changhua Univ. of Education (Taiwan)
Hsiu-Fen Chen, National Changhua Univ. of Education (Taiwan)
Ming-Wei Yao, National Changhua Univ. of Education (Taiwan)
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)


Published in SPIE Proceedings Vol. 5628:
Semiconductor Lasers and Applications II
Jian-quan Yao; Yung Jui Chen; Seok Lee, Editor(s)

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