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Proceedings Paper

Software to simulate dry etch in photomask fabrication
Author(s): Sergey Babin; Konstantin Bay; Sergey Okulovsky
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Paper Abstract

Dry etch in maskmaking is one of the major contributors to variation of critical dimensions (CD) which is caused primarily by the microloading and macroloading effects. CD variation during etch depends on the type of pattern involved. It would be highly desirable to run a pattern through the software to predict CD variation due to dry etch and decide if the variation is within the prescribed tolerance or if the pattern needs additional correction, and to what degree. In this paper, a dry etch simulation tool TRAVIT is introduced that is capable of simulating etch profile, CD, and CD errors. Using a set of desired process conditions, the software runs the simulation for the pattern of interest that helps to optimize sidewall, bias, and CD variation. Incorporating simulation into the maskmaking process can save cost and shorten the time to production.

Paper Details

Date Published: 6 December 2004
PDF: 7 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.575426
Show Author Affiliations
Sergey Babin, Abeam Technologies (United States)
Konstantin Bay, Abeam Technologies (United States)
Sergey Okulovsky, Abeam Technologies (United States)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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