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Proceedings Paper

CD-measurement technique for hole patterns on stencil mask
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Paper Abstract

EB lithography has a potential to successfully form hole patterns as small as 80 nm with a stencil mask. In a previous paper we proposed a technique using a HOLON dual-mode critical dimension (CD) SEM ESPA-75S in the transmission mode for CD measurement of line-and-space patterns on a stencil mask. In this paper we extend our effort of developing a CD measurement technique to contact hole features and determine it in comparison of measured values between features on mask and those printed on wafer. We have evaluated the width method and the area methods using designed 80-500 nm wide contact hole patterns on a large area membrane mask and their resist images on wafer printed by a LEEPL3000. We find that 1) the width method and the area methods show an excellent mask-wafer correlation for holes over 110 nm, and 2) the area methods show a better mask-wafer correlation than the width method does for holes below 110 nm. We conclude that the area calculated from the transmission SEM image is more suitable in defining the hole dimensions than the width for contact holes on a stencil mask.

Paper Details

Date Published: 6 December 2004
PDF: 10 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.575371
Show Author Affiliations
Mikio Ishikawa, Dai Nippon Printing Co., Ltd. (Japan)
Satoshi Yusa, Dai Nippon Printing Co., Ltd. (Japan)
Tadahiko Takikawa, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Fujita, Dai Nippon Printing Co., Ltd. (Japan)
Hisatake Sano, Dai Nippon Printing Co., Ltd. (Japan)
Morihisa Hoga, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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