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Proceedings Paper

Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells
Author(s): Yun Xu; Xiaopeng Zhu; Guofeng Song; Qing Cao; Liang Guo; Yuzhang Li; Lianghui Chen
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Paper Abstract

Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6×6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. To get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.

Paper Details

Date Published: 31 January 2005
PDF: 5 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.575291
Show Author Affiliations
Yun Xu, Institute of Semiconductors, CAS (China)
Xiaopeng Zhu, Institute of Semiconductors, CAS (China)
Guofeng Song, Institute of Semiconductors, CAS (China)
Qing Cao, Institute of Semiconductors, CAS (China)
Liang Guo, Institute of Semiconductors, CAS (China)
Yuzhang Li, Institute of Semiconductors, CAS (China)
Lianghui Chen, Institute of Semiconductors, CAS (China)


Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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