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Proceedings Paper

980-nm high-power strained quantum well laser array fabricated by MBE
Author(s): Xin Gao; Baoxue Bo; Ling Wang; Yi Qu
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Paper Abstract

980nm InGaAs/GaAs separate confinement heterostructure (SCH) single quantum well (SQW) laser is grown by MBE. Photoluminescence and X-ray double crystal diffraction of the epilayer demonstrate good optical and crystalline quality. A QCW output power of 64.1W is achieved for a cm bar, which is limited by the current source. No thermal rollover in the output power is observed. The threshold current is 18.6A at 15°C. The slope efficiency is 1.14W/A with a corresponding power efficiency of 31.7%.

Paper Details

Date Published: 31 January 2005
PDF: 6 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.575258
Show Author Affiliations
Xin Gao, Changchun Univ. of Science and Technology (China)
Baoxue Bo, Changchun Univ. of Science and Technology (China)
Ling Wang, Changchun Univ. of Science and Technology (China)
Yi Qu, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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