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Proceedings Paper

GaAs/GaAs0.89Sb0.11 double heterojunction bipolar transistors (DHBTs) grown by SSMBE with a GaAs decomposition source
Author(s): Ping-Juan Niu; Haiyang Hu; Hong-Wei Dong; Wenxin Wang; Junming Zhou
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Paper Abstract

For reducing turn-on voltage of GaAs-based HBT, Al0.25Ga0.75As/GaAs0.89Sb0.11/GaAs DHBTs on GaAs (001) is successfully grown by solid-source molecular beam epitaxy (SSMBE) with a GaAs decomposition source, no misfit dislocation in the base layer was found by observation of SEM. It suggests that GaAsSb base layer is fully strained. Device with 75x75μm2 emitter mesa area is fabricated using this structure and yielded an excellent performance with high current gain of 30 at the collector current density of 2×103A/cm2 and low turn-on voltage of 0.8V. Due to the smaller band gap of the GaAsSb base layer, GaAsSb is useful material for reducing turn-on voltage of GaAs-based HBTs.

Paper Details

Date Published: 31 January 2005
PDF: 6 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.575247
Show Author Affiliations
Ping-Juan Niu, Tianjin Polytechnic Univ. (China)
Haiyang Hu, Tianjin Polytechnic Univ. (China)
Institute of Physics (China)
Hong-Wei Dong, Institute of Physics (China)
Wenxin Wang, Institute of Physics (China)
Junming Zhou, Institute of Physics (China)

Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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