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Proceedings Paper

Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser
Author(s): Yongqiang Ning; Yanfang Sung; Zhenhua Jin; Lijun Wang
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Paper Abstract

Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission, amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm, dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.

Paper Details

Date Published: 17 January 2005
PDF: 6 pages
Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); doi: 10.1117/12.575229
Show Author Affiliations
Yongqiang Ning, Changchun Institute of Optics, Fine Mechanics and Physics, CAS (China)
Yanfang Sung, Changchun Institute of Optics, Fine Mechanics and Physics, CAS (China)
Zhenhua Jin, Changchun Institute of Optics, Fine Mechanics and Physics, CAS (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics and Physics, CAS (China)


Published in SPIE Proceedings Vol. 5644:
Optoelectronic Devices and Integration
Hai Ming; Xuping Zhang; Maggie Yihong Chen, Editor(s)

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