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Proceedings Paper

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
Author(s): Yun Xu; Xiaopeng Zhu; Qiaoqiang Gan; Guofeng Song; Qing Cao; Liang Guo; Yuzhang Li; Lianghui Chen
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Paper Abstract

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6×6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

Paper Details

Date Published: 31 January 2005
PDF: 5 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.574932
Show Author Affiliations
Yun Xu, Institute of Semiconductors, CAS (China)
Xiaopeng Zhu, Institute of Semiconductors, CAS (China)
Qiaoqiang Gan, Institute of Semiconductors, CAS (China)
Guofeng Song, Institute of Semiconductors, CAS (China)
Qing Cao, Institute of Semiconductors, CAS (China)
E-O National Co., Ltd. (China)
Liang Guo, Institute of Semiconductors, CAS (China)
E-O National Co., Ltd. (China)
Yuzhang Li, Institute of Semiconductors, CAS (China)
E-O National Co., Ltd. (China)
Lianghui Chen, Institute of Semiconductors, CAS (China)

Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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