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Proceedings Paper

Novel measurement of traveling-wave semiconductor optical amplifier with tensile-strained-barrier MQW structure
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Paper Abstract

A novel technique is presented in obtaining the performance characteristics of traveling-wave semiconductor optical amplifier (TWA) with tensile-strained-barrier multiple-quantum-well structure. In-out fiber ends of TWA are used to construct an external cavity resonator to produce big ripple on amplified spontaneous emission (ASE) spectrum. By this means, Hakki-Paoli method is adopted to obtain gain and differential gain spectra over a wide spectral range. From measured longitudinal mode spacing and peak wavelength shift due to increased bias current, we further calculate the effective refractive index, carrier-induced refractive index change and linewidth enhancement factor. Some special features about ASE mode spectrum shift and refractive index change above lasing threshold are revealed and explained.

Paper Details

Date Published: 31 January 2005
PDF: 7 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.574436
Show Author Affiliations
Qingyuan Miao, Huazhong Univ. of Science and Technology (China)
Dexiu Huang, Huazhong Univ. of Science and Technology (China)
Lirong Huang, Huazhong Univ. of Science and Technology (China)
Tao Wang, Huazhong Univ. of Science and Technology (China)
Xinliang Zhang, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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