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Proceedings Paper

Measurement of photoelectron behavior in K4Ru(CN)6-doped AgCl emulsion
Author(s): Xiuhong Dai; Xiaoli Jiang; Xiaowei Li; Guoyi Dong; Shaopeng Yang; Xian Zhou
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Paper Abstract

Photoelectron decay characteristics in latent image formation process directly reflect photographic efficiency of silver halide crystals. Dopants can be substitutionally incorporated into AgX crystals and influence the photoelectron action by introducing appropriate electron traps. Long photoelectron lifetime can improve the photographic efficiency of intrinsic or unsensitized grains. In general, AgCl are intrinsic or unsensitized emulsion. Cubic AgCl microcrystals doped with K4Ru(CN)6 were measured by microwave absorption and dielectric-spectrum technique. Measurement of the photoelectron decay process as a function of doping position and concentration can provide important information about the electronic properties. The experimental results show the photoelectron decay time at room temperature is more or less longer than undoped samples. The photoelectron decay time increases with the doping concentration increasing and with the doping position closer to the core except for position 30%Ag and over high concentration 3.21x10-5 mol/molAg. When doping position is 30%Ag, the photoelectron decay time reaches its maximum at the doping concentration of 1.5x10-5 mol/molAg. At doping concentration 3.21x10-5 mol/molAg, the photoelectron decay time reaches its maximum at the doping position 60%Ag. Through studying the photoelectron decay behavior, we can know the doping can improve the image quality of AgCl emulsion.

Paper Details

Date Published: 10 February 2005
PDF: 6 pages
Proc. SPIE 5638, Optical Design and Testing II, (10 February 2005); doi: 10.1117/12.574232
Show Author Affiliations
Xiuhong Dai, Hebei Univ. (China)
Xiaoli Jiang, Hebei Univ. (China)
Xiaowei Li, Hebei Univ. (China)
Guoyi Dong, Hebei Univ. (China)
Shaopeng Yang, Hebei Univ. (China)
Xian Zhou, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 5638:
Optical Design and Testing II
Yongtian Wang; Zhicheng Weng; Shenghua Ye; Jose M. Sasian, Editor(s)

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