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Proceedings Paper

High-volume production of 650nm GaInP/AlGaInP laser diodes
Author(s): Wei Xia; Ling Wang; Shuqiang Li; Zhongxiang Ren; Xiangang Xu
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Paper Abstract

With the support of state key project, Shandong Huaguang Optoelectronics Co. Ltd. realizes the mass production of low threshold current 650nm GaInP/AlGaInP semiconductor laser chips, rapidly. At present, six million 650nm LD chips can be produced per month. The lowest threshold current at 25°C is 7.4mA. The slope efficiency reaches 1.1mW/mA and the output power is 34mW at 40mA CW operation.

Paper Details

Date Published: 31 January 2005
PDF: 4 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.573862
Show Author Affiliations
Wei Xia, Shandong Univ. (China)
Shandong Huaguang Optoelectronics Co. Ltd (China)
Ling Wang, Shandong Univ. (China)
Shuqiang Li, Shandong Univ. (China)
Shandong Huaguang Optoelectronics Co. Ltd (China)
Zhongxiang Ren, Shandong Huaguang Optoelectronics Co. Ltd (China)
Xiangang Xu, Shandong Univ. (China)
Shandong Huaguang Optoelectronics Co. Ltd (China)


Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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