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Proceedings Paper

Characteristic of vapor dynamic process for sulfur-doped n-type diamond films
Author(s): Qingxun Zhao; Xiaodong Qiao; Yinshun Wang; Jing Zhang; Zheng Yan
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Paper Abstract

Monte Carlo simulations are adopted to study the space distribution of the particles in the mixture of CH4/H2/H2S/Ar considering the avalanche collision and dissociative ionization of electrons based on the theory of glow discharge in electron-assisted chemical vapor deposition (EACVD) system. The relationship between the space distribution and the recombination rate of H and CH3, CH3+ fragment particles is given. The dynamic process of the n-type doped diamond film is simulated under different gas pressure. The particle distributions of S, S+ and Ar+ are also obtained. The result is very important for investigation of n-type diamond film doping at low temperature.

Paper Details

Date Published: 20 January 2005
PDF: 5 pages
Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); doi: 10.1117/12.573787
Show Author Affiliations
Qingxun Zhao, Hebei Univ. (China)
Xiaodong Qiao, Hebei Univ. (China)
Yinshun Wang, Hebei Univ. (China)
Jing Zhang, Hebei Univ. (China)
Zheng Yan, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 5633:
Advanced Materials and Devices for Sensing and Imaging II
Anbo Wang; Yimo Zhang; Yukihiro Ishii, Editor(s)

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