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Proceedings Paper

Reactive ion beam etching of HfO2 film using Ar/CHF3 gas chemistries
Author(s): Xudi Wang; Xiangdong Xu; Ying Liu; Yiling Hong; Shaojun Fu
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Paper Abstract

A number of current and future optical and optoelectronic devices require the creation of structure in HfO2 film. The reactive ion beam etching of HfO2 film and photoresist mask in Ar/CHF3 gas mixture was examined as a function of ion energy, discharge composition and ion beam incident angle. The details of etch rate have been interpreted in terms of mechanism of etching. The etch rate has shown a square root dependence on ion energy and variation versus incidence angle. The CHF3- plasma produced some chemical enhancement in HfO2 film etching. Compared with pure argon etching, better selectivity and higher fidelity pattern transfer were achieved with Ar/CHF3 for HfO2 film over photoresisit mask. The AFM scans of etched HfO2 film by tapping mode showed good surface quality.

Paper Details

Date Published: 7 February 2005
PDF: 5 pages
Proc. SPIE 5636, Holography, Diffractive Optics, and Applications II, (7 February 2005); doi: 10.1117/12.573666
Show Author Affiliations
Xudi Wang, Univ. of Science and Technology of China (China)
Hefei Univ. of Technology (China)
Xiangdong Xu, Univ. of Science and Technology of China (China)
Ying Liu, Univ. of Science and Technology of China (China)
Yiling Hong, Univ. of Science and Technology of China (China)
Shaojun Fu, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 5636:
Holography, Diffractive Optics, and Applications II
Yunlong Sheng; Dahsiung Hsu; Chongxiu Yu; Byoungho Lee, Editor(s)

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