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Proceedings Paper

A new ZEP520/P(MMA-MAA)/ZEP520 trilayer process for T-shaped gate using synchrotron-based proximity x-ray lithography
Author(s): Changqing Xie; Dapeng Chen; Jiebing Niu; Ming Liu; Tianchun Ye; Futing Yi; Liangqiang Peng
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Paper Abstract

T-shaped gate formation is a important process step in the fabrication of high frequency monolithic microwave integrated circuits (MMIC), many different lithography process have been used for this purpose, such as bi-layer or tri-layer using e-beam lithography, hybrid UV-e-beam lithography. Proximity x-ray lithography (PXL) has shown many advantages in the MMIC manufacturing, such as high resolution, large process windows, low cost and high throughout, and so on. In this article, a new ZEP520/P(MMA-MAA)/ZEP520 tri-layer process using synchrotron-based PXL is proposed for the T-shaped gate formation, without any additional intermediate layer, the resists intermixing problem has been solved successfully, a dark-field isolated trench x-ray mask was used for this purpose. A three stage development process using xylene for the head, MIBK:IPA=1:3 for the middle and xylene for the foot was also used. Initial work has shown this process to be robust.

Paper Details

Date Published: 27 January 2005
PDF: 6 pages
Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); doi: 10.1117/12.573519
Show Author Affiliations
Changqing Xie, Institute of Microelectronics, CAS (China)
Dapeng Chen, Institute of Microelectronics, CAS (China)
Jiebing Niu, Institute of Microelectronics, CAS (China)
Ming Liu, Institute of Microelectronics, CAS (China)
Tianchun Ye, Institute of Microelectronics, CAS (China)
Futing Yi, Institute of High Energy Physics, CAS (China)
Liangqiang Peng, Institute of High Energy Physics, CAS (China)

Published in SPIE Proceedings Vol. 5645:
Advanced Microlithography Technologies
Yangyuan Wang; Jun-en Yao; Christopher J. Progler, Editor(s)

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