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Proceedings Paper

Study of Nd-implanted Si-based emitting film materials
Author(s): Meiling Yuan; Qingnian Wang; Shuifeng Wang; Xiaofeng Zhang; Le Jiang
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Paper Abstract

The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer and thermal oxide Si samples doped Nd ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of Nd ion dose during ion beam synthesis within a certain limits, moreover, photoluminescence is closely relative to the temperature of thermal annealing. Besides, the feature and appearance of the samples was surveyed with atomic force microscopy (AFM).The photoluminescence mechanism for our samples is also discussed.

Paper Details

Date Published: 12 January 2005
PDF: 5 pages
Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); doi: 10.1117/12.573316
Show Author Affiliations
Meiling Yuan, Nanchang Univ. (China)
Qingnian Wang, Nanchang Univ. (China)
Shuifeng Wang, Nanchang Univ. (China)
Xiaofeng Zhang, Nanchang Univ. (China)
Le Jiang, Nanchang Univ. (China)


Published in SPIE Proceedings Vol. 5632:
Light-Emitting Diode Materials and Devices
Gang Yu; Chuangtian Chen; Changhee Lee, Editor(s)

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