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Proceedings Paper

Molecular beam epitaxy growth of CdTe on Si(211)
Author(s): Lu Chen; Yuan Zhang Wang; Yan Wu; Jun Wu; Mei Fang Yu; Yi Min Qiao; Li He
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Paper Abstract

CdTe growth on Si is the major challenge for HgCdTe. The recent results on MBE growth of 3-in CdTe(211)B/Si are reported. The Si substrates were (211) orientated, and a low temperature surface cleaning process was employed. To obtain twin-free CdTe(211)B, nucleation process of ZnTe on Si was studied at different conditions. Under the optimal growth condition, the average FWHM value less than 120 arc sec of twin-free CdTe(211)B films for 10-12μm was obtained. The lowest FWHM value of 100 arc sec was achieved.

Paper Details

Date Published: 10 January 2005
PDF: 8 pages
Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); doi: 10.1117/12.573170
Show Author Affiliations
Lu Chen, Shanghai Institute of Technical Physics, CAS (China)
Yuan Zhang Wang, Shanghai Institute of Technical Physics, CAS (China)
Yan Wu, Shanghai Institute of Technical Physics, CAS (China)
Jun Wu, Shanghai Institute of Technical Physics, CAS (China)
Mei Fang Yu, Shanghai Institute of Technical Physics, CAS (China)
Yi Min Qiao, Shanghai Institute of Technical Physics, CAS (China)
Li He, Shanghai Institute of Technical Physics, CAS (China)


Published in SPIE Proceedings Vol. 5640:
Infrared Components and Their Applications
Haimei Gong; Yi Cai; Jean-Pierre Chatard, Editor(s)

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