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Proceedings Paper

Study on the limit of linear response of MCT photodiode
Author(s): Guangming Cao; Huiguo Qiu; Yangcheng Huang; Wei Gong; Haimei Gong
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Paper Abstract

The current-voltage (I-V) characteristics of HgCdTe photodiode under up to 33 dB of irradiance level have been investigated with a continuous-wave solid state laser. Short-circuit photocurrent and open-circuit photovoltage are observed to be saturated under high-level photon injection. It is found that the increasing of reverse bias can dramatically improve the response linearity of photodiode under high irradiance. The I-V characteristics and dynamic resistance versus bias relationship of photodiode under irradiance cannot be explained satisfactorily with present theory. Considering the effect of irradiance on photodiode series resistance and parallel resistance, an interpretation based abrupt junction model is presented to account for the effect of bias on I-V characteristics of HgCdTe photodiode.

Paper Details

Date Published: 10 January 2005
PDF: 9 pages
Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); doi: 10.1117/12.572791
Show Author Affiliations
Guangming Cao, Shanghai Institute of Technical Physics, CAS (China)
Huiguo Qiu, Shanghai Institute of Technical Physics, CAS (China)
Yangcheng Huang, Shanghai Institute of Technical Physics, CAS (China)
Wei Gong, Shanghai Institute of Technical Physics, CAS (China)
Haimei Gong, Shanghai Institute of Technical Physics, CAS (China)

Published in SPIE Proceedings Vol. 5640:
Infrared Components and Their Applications
Haimei Gong; Yi Cai; Jean-Pierre Chatard, Editor(s)

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