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Proceedings Paper

Influence of a new surface treatment method on ohmic contact resistivity of p-type GaN
Author(s): Yingwen Tang; Xue Li; Yong Kang; Xiangyang Li; Haimei Gong
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Paper Abstract

The contact resistivity of Ni/Au contact on p-type GaN was drastically decreased through the surface treatments in sequence using alcohol-based HCl and KOH solution. The surface oxide on p-type GaN formed during epitaxial growth was removed in the alcohol-based HCl and KOH solution, The O 1s and C 1s core-level peaks in the x-ray photoemission spectra showed that the alcohol-based HCl treatment was more effective in removing of the surface oxide layer. Compared to the KOH solution treated sample, the alcohol-based HCl-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.3 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Ni/Au metal to p-type GaN be lowered by the surface treatment, which results in a drastic reduction in specific contact resistance.

Paper Details

Date Published: 20 January 2005
PDF: 8 pages
Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); doi: 10.1117/12.572681
Show Author Affiliations
Yingwen Tang, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Yong Kang, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 5633:
Advanced Materials and Devices for Sensing and Imaging II
Anbo Wang; Yimo Zhang; Yukihiro Ishii, Editor(s)

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