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Proceedings Paper

Analysis of optical XOR gate performance based on cross-polarization modulation effect in semiconductor optical amplifier
Author(s): Zhenbin Ge; Wanchun Yang; Min Zhang; Ling Wang; Peida Ye
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Paper Abstract

In this paper, for the first time, we analyze the optical exclusive OR (XOR) gate based on cross-polarization modulation (XPolM) effect in semiconductor optical amplifier (SOA) using nonlinear polarization rotation (NPR) theory. The extinction ratio (ER) of optical XOR gate, which reflects the performance of the gate, is calculated in consideration of the injected current, the length and the polarization angle of input signals of the SOA. The performance of the optical XOR gate can be optimized for some proper parameters of the SOA.

Paper Details

Date Published: 11 February 2005
PDF: 8 pages
Proc. SPIE 5625, Optical Transmission, Switching, and Subsystems II, (11 February 2005); doi: 10.1117/12.572404
Show Author Affiliations
Zhenbin Ge, Beijing Univ. of Posts and Telecommunications (China)
Wanchun Yang, Beijing Univ. of Posts and Telecommunications (China)
Min Zhang, Beijing Univ. of Posts and Telecommunications (China)
Ling Wang, Beijing Univ. of Posts and Telecommunications (China)
Peida Ye, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 5625:
Optical Transmission, Switching, and Subsystems II
Cedric F. Lam; Wanyi Gu; Norbert Hanik; Kimio Oguchi, Editor(s)

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