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Proceedings Paper

Comparison of laser-induced damage of optical crystals from the USA and USSR
Author(s): M. J. Soileau; Tai-Huei Wei; Ali A. Said; N. I. Chapliev; Serge V. Garnov; Alexander S. Epifanov
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Paper Abstract

In this paper we report the results of comparative measurements of laser-induced damage (LID) in optical material from the USA and the USSR. Bulk LID thresholds were measured in very pure alkali halide crystals at 1064 nm and 532 nm and surface LID thresholds in selected nonlinear optical crystals were measured at 10.6 microns. The results show that the LID thresholds of the USSR and the USA samples are approximately the same except for KC1 where the USA samples have a factor of 2 higher LID threshold electric field then the Soviet sample.

Paper Details

Date Published: 1 June 1991
PDF: 6 pages
Proc. SPIE 1441, Laser-Induced Damage in Optical Materials: 1990, (1 June 1991); doi: 10.1117/12.57231
Show Author Affiliations
M. J. Soileau, CREOL/Univ. of Central Florida (United States)
Tai-Huei Wei, CREOL/Univ. of Central Florida (United States)
Ali A. Said, CREOL/Univ. of Central Florida (United States)
N. I. Chapliev, General Physics Institute (Russia)
Serge V. Garnov, General Physics Institute (Russia)
Alexander S. Epifanov, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 1441:
Laser-Induced Damage in Optical Materials: 1990
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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