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Proceedings Paper

R-mask: a new concept and its application for small-volume production
Author(s): Katsuya Hayano; Shoji Hotta; Norio Hasegawa; Kunihiro Hosono; Toshihiko Tanaka; Kazuyuki Suko; Shiho Sasaki; Hiroshi Mohri; Morihisa Hoga; Naoya Hayashi
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Paper Abstract

We have developed a resist-shade mask (R-mask) technology applicable for small-volume production. The R-mask uses a novel resist as a shading material instead of chromium (Cr), and it exhibits sufficient durability against KrF exposure for ASIC and pilot line applications. Because the R-mask does not require a Cr etching process, it can reduce mask costs and improve critical dimension (CD) uniformity. A defect inspection technique for R-masks has also been investigated, and no defects were observed on a wafer for several R-masks used for device fabrication. The part of the R-mask making contact in exposure tools was carefully designed to not retain resist material so as to avoid particle contamination. We applied several R-masks to form wiring layers for 0.25-um and 0.18-um logic devices and confirmed that there were no differences in process margin and product yield between the R-masks and conventional Cr masks. We have also developed the partial R-mask, which consists of both conventional Cr mask and R-mask areas. The partial R-mask is very effective for customizing semiconductor chips. The R-mask area is applied only to customized circuit areas or certain wiring patterns to adjust circuit characteristics, whereas the common circuit area is delineated by the Cr pattern. The R-mask can be also used to customize attenuated phase-shifting masks, and to make unnecessary hole patterns opaque in prepared hole arrays. The R-mask is a very promising technology for reducing mask costs and improving the turn-around time (TAT) of masks, because of its simple manufacturing process and reworkable capability.

Paper Details

Date Published: 6 December 2004
PDF: 12 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.572200
Show Author Affiliations
Katsuya Hayano, Hitachi, Ltd. (Japan)
Shoji Hotta, Hitachi, Ltd. (Japan)
Norio Hasegawa, Hitachi, Ltd. (Japan)
Kunihiro Hosono, Renesas Technology Corp. (Japan)
Toshihiko Tanaka, Renesas Technology Corp. (Japan)
Kazuyuki Suko, Renesas Technology Corp. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Morihisa Hoga, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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